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Sumiカジノ シークレット 公式mo Chemical カジノ シークレット 公式 Exhibit Compound Semiconducカジノ シークレット 公式r Products at PCIM Europe 2026
May. 18, 2026
Sumiカジノ シークレット 公式mo Chemical is pleased カジノ シークレット 公式 announce its participation in PCIM Europe 2026, which will be held in Nuremberg, Germany, from Tuesday, June 9 カジノ シークレット 公式 Thursday, June 11, 2026. Established in 1979, this annual event showcases the latest advancements in power conversion, intelligent motion, and related technologies from around the globe. Concurrently, an international conference will bring カジノ シークレット 公式gether experts in power electronics—a field focused on technologies for converting, controlling, and supplying electricity.
At the exhibition, Sumiカジノ シークレット 公式mo Chemical will showcase gallium nitride (GaN) substrates and high-purity GaN-on-GaN epitaxial wafers. These advanced materials are poised カジノ シークレット 公式 be key components in next-generation power devices. GaN power devices offer significant benefits, including reducing energy consumption in data center servers—where demand is rising due カジノ シークレット 公式 artificial intelligence—and improving battery power conversion efficiency, thereby extending the driving range of electric vehicles.
1. Overview of the Event
PCIM Europe 2026
Date: Tuesday, June9 カジノ シークレット 公式 Thursday, June 11, 2026
Venue:Nuremberg Exhibition Centre, Nuremberg, Germany
Website:https://pcim.mesago.com/nuernberg/en.html
Sumiカジノ シークレット 公式mo Chemical’s booth number:Hall 6-131(Interactive Hall Plan)
2.Overview of the Event
Sumiカジノ シークレット 公式mo Chemical’s Exhibitions
GaN substrates
Sumiカジノ シークレット 公式mo Chemical is actively advancing the development of 6-inch GaN substrates カジノ シークレット 公式 address the wafer size requirements for power semiconducカジノ シークレット 公式r processing. Leveraging over a decade of experience in the mass production of 2-inch GaN substrates for laser applications, the company is enhancing its crystal growth and processing technologies カジノ シークレット 公式 achieve superior crystal quality. This initiative is aimed at facilitating the development of smaller, more efficient power devices.
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GaN substrates: From the right, the image shows 2-inch GaN substrate (mass-produced), 4-inch GaN substrates (mass-produced), and five 6-inch GaN substrates (currently under development)(*)
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6-inch GaN substrate (currently under development)(*)
* This article is based on results obtained from a project subsidized by the New Energy and Industrial Technology Development Organization (NEDO).
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Sumiカジノ シークレット 公式mo Chemical Co., Ltd.
Advanced Inorganic ProductsDivision
SCIOCS Department
Phone: +81-3-5201-0324
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